内存参数
内存格式因素 |
240-pin DIMM |
CAS响应时间 |
5 |
内置存储器 |
2 GB |
内存类型 |
DDR2 |
内存时钟速度 |
667 MHz |
內存佈局(模塊 x 內存大小) |
2 x 2 GB |
DDR2 - 667 Unbuffered DIMM, 2048MB
DDR2 is the next-generation evolution of DDR memory technology. DDR2 memory features faster speeds, higher data bandwidths, lower power consumption and enhanced thermal performance. DDR2 memory chips will be available in Fine-pitch BGA (FBGA) chip packages for improved electrical and thermal characteristics. In addition, DDR2 memory chips will incorporate On-Die Termination (ODT) to minimize memory signal reflections at high speeds, thereby improving timing margins. DDR2 memory chips will come in capacities up to 4 Gigabits, allowing for higher-capacity modules.
The Module is DDR2-667 CL5 ECC Unbuffered Memory module. The Module density from 512MB to 2GB, it consists 64/128MX8 bit DDR2-667 Synchronous DRAMs in FBGA packages, Memory Module intented for mounting into 240-pin edge connector sockets. The electrical and mechanical specifications are as follows
-JEDEC Standard
-DDR2 Speed Grade : 667Mbps
-Unbuffered DIMM : 240-pin
-Memory Organization : x8 FBGA DRAM chip
-DDR2 DRAM interface : SSTL_18
-CAS latency : 5-5-5
-Bandwidth : 5300MB/s
-VDD voltage : 1.8+-0.1V
-VDDQ voltage : 1.8+-0.1V
-Serial presence detect with EEPROM
-PCB height : 1.18 inch
-RoHS Compliant
-Application : Desktop