内存参数
| 内置存储器 |
1 GB |
| 内存类型 |
DDR2 |
| 内存时钟速度 |
800 MHz |
| 内存电压 |
1.8 V |
| CAS响应时间 |
5 |
DDR2 - 800 Unbuffered DIMM, 1024MB
DDR2 is the next-generation evolution of DDR memory technology. DDR2 memory features faster speeds, higher data bandwidths, lower power consumption and enhanced thermal performance. DDR2 memory chips will be available in Fine-pitch BGA (FBGA) chip packages for improved electrical and thermal characteristics. In addition, DDR2 memory chips will incorporate On-Die Termination (ODT) to minimize memory signal reflections at high speeds, thereby improving timing margins. DDR2 memory chips will come in capacities up to 4 Gigabits, allowing for higher-capacity modules.
The Module is DDR2-800 CL5 Unbuffered Memory module. The Module density from 512MB to 2GB, it consists 64/128MX8 bit DDR2 800 Synchronous DRAMs in FBGA packages, Memory Module intented for mounting into 240-pin edge connector sockets.