内存参数
组件应用 |
PC/server |
内置存储器 |
1 GB |
内存类型 |
DDR |
内存时钟速度 |
400 MHz |
内存格式因素 |
184-pin DIMM |
内存电压 |
2.6 V |
CAS响应时间 |
3 |
內存佈局(模塊 x 內存大小) |
1 x 1 GB |
RAM, DDR, 1GB, 400MHz
Description
M2U1G64DS8HB1G and M2Y1G64DS8HB1G are unbuffered 200-Pin Double Data Rate (DDR) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM) and are organized as two ranks of 128Mbx64 high-speed memory array using sixteen 64Mx8 DDR SDRAMs TSOP packages. M2U51264DS88B1G and M2Y51264DS88B1G are unbuffered 200-Pin DDR Synchronous DRAM UDIMM and are organized as a single rank of 64Mbx64 high-speed memory array using eight 64Mx8 DDR SDRAMs TSOP packages. M2U25664DSH4B1G and M2Y25664DSH4B1G are unbuffered 200-Pin DDR Synchronous DRAM UDIMM and are organized as a single rank of 32Mbx64 high-speed memory array using four 32Mx16 DDR SDRAMs TSOP packages.
Depending on the speed grade, these DIMMs are intended for use in applications operating up to 200 MHz clock speeds and achieves high-speed data transfer rates of up to 400 MHz. Prior to any access operation, the device CAS latency and burst /length/operation type must be programmed into the DIMM by address inputs and I/O inputs BA0 and BA1 using the mode register set cycle.
The DIMM uses a serial EEPROM and through the use of a standard IIC protocol the serial presence-detect implementation (SPD) can be accessed. The first 128 bytes of the SPD data are programmed with the module characteristics as defined by JEDEC.