内存参数
| 内置存储器 |
1 GB |
| 内存类型 |
DDR2 |
| 内存时钟速度 |
400 MHz |
| CAS响应时间 |
3 |
2 X 512MB PC2-3200 ECC DDR2 NC SDRAM RDIMM KIT NS (NMS)
This dual-channel DDR2 (DDR400) memory option unleashes the power of the Intel Processor with its 800MHz front-side bus speed by matching the processor front-side bus bandwidth of 6.4GB with an equal, balanced 6.4GB of memory bandwidth. In combination with the CPU and chipset, system memory is one of the key contributors to overall system performance. Nearly every application and system component, whether internal or external, accesses the system memory. The CPU initiates the heaviest access to and from the system memory. Every application processed by the CPU is first transferred to the system memory and then to the CPUs local memory (known as cache) for execution. Because the CPU uses system memory for temporary storage of application instructions, and computation results, having fast access to system memory by the CPU will have a positive impact on the system application performance and improves the overall responsiveness of the IBM eServer xSeries server or workstation. DDR400 memory is one of the highest performing memory architectures available in the Intel server market today. One of the key features of this new memory advance is the FBGA (Fine Pitch Ball Grid Array) packaging technology which allows for a slim module design that increases the air flow space between the memory module and the circuit board. This increased air flow equates to improved system thermal performance and reliability. In addition these new memory modules consume less standby power and operating power than earlier SDRAM modules. These technology advances result in a balanced xSeries system platform that is optimized for memory- demanding applications such as server consolidation, collaboration, database, e-commerce, business intelligence and customer relationship marketing applications.
Features and Benefits:
•Higher peak bandwidth/transfer rates for increased performance delivers up to 20% higher peak bandwidth than DDR memory
•Lower power consumption and better thermal characteristics. The 1.8v operational power delivers a 50% power reduction compared to DDR memory
•Up to four DIMMs per channel compared to three DIMMs with DDR, resulting in as much as a 25% improvement compared to DDR memory
•FBGA technology assists in creating the following technology advances: smaller size modules; thinner height; higher reliability; better signal quality and higher memory performance.
