内存参数
| 内存类型 |
DDR2 |
| 内存时钟速度 |
533 MHz |
| 内存电压 |
1.8 V |
| 内置存储器 |
1 GB |
| 內存佈局(模塊 x 內存大小) |
1 x 1 GB |
| CAS响应时间 |
4 |
DDR2-533 1 GB - 1024 MB SO-DIMM module, 64Mx8 IC organisation, 533 MHz / PC2 4200
These Memory devices are JEDEC standard unbuffered DIMM modules,
based on CMOS DDR2 SDRAM technology. These devices consist of CMOS DDR2 SDRAMs in FBGA packages on a 200- pin glass epoxy substrate.The memory array is designed with Double Data Rate (DDR2) Synchronous DRAMs for unbuffered applications. The pipelined, multibanked architecture of DDR2 SDRAMs allows for concurrent operation, thereby providing high, effective bandwidth. Decoupling capacitors are mounted on the PCB board in parallel for each DDR2 SDRAM, which provides proper voltage supply impedance over the whole frequency range of operations, in accordance with JEDEC
specifications. These modules feature Serial Presence Detect (SPD) based on a serial EEPROM device, using the 2-pin I2C protocol.