Elixir RAM DDR2 2GB, 800Mhz, 128Mx8, CL5 2GB DDR2 800MHz memory module

Elixir RAM DDR2 2GB, 800Mhz, 128Mx8, CL5 2GB DDR2 800MHz memory module

MPN: M2Y2G64TU8HD6B-AC
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Technical specifications

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Memory

Internal memory 2 GB
Internal memory type DDR2
Memory clock speed 800 MHz
Memory voltage 1.8 V
CAS latency 5

Additionally

Chips organization 256M x 64
RAM DDR2 2GB, 800Mhz, 256Mx64, CL5 Description
M2N1G64TUH8D4F, M2N2G64TU8HD4B, M2N1G64TUH8D5F, M2N2G64TU8HD5B, M2N1G64TUH8D6F and M2N2G64TU8HD6B are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1 GB)/256Mx64 (2GB) high-speed memory array. M2N1G64TUH8D4F, M2N1G64TUH8D5F and 2N1G64TUH8D6F use eight 64Mx16 84-ball BGA packaged devices and M2N2G64TU8HD4B, M2N2G64TU8HD5B and M2N2G64TU8HD6B use sixteen 128Mx8 60-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All Elixir DDR2 SODIMMs provide a high-performance, flexible 8-byte interface in a space-saving footprint.
The DIMM is intended for use in applications operating of 333MHz/400MHz clock speeds and achieves high-speed data transfer speed of 667Mbps/800Mbps. Prior to any access operation, the device CAS latency and burst/length/operation type must be programmed into the DIMM by address inputs A0-A12 (1GB) / A0-A13 (2GB) and I/O inputs BA0, BA1 and BA2 using the mode register set cycle. The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
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