Intel DC S3500 Serial ATA III

Intel DC S3500 Serial ATA III

EAN: 735858275255
MPN: SSDSCKHB120G401
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Technical specifications

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Power

Power consumption (read) 2.3 W
Power consumption (write) 2.3 W
Power consumption (idle) 0.5 W

Other features

Uncorrectable Bit Error Rate (UBER) 1 sector per 10^16 bits read
Processor lithography 20 nm
Internal Y

Performance

SSD usage tag Data center
Memory type MLC
Read speed 440 MB/s
Write speed 160 MB/s
S.M.A.R.T. support Y
Solid-state drive capacity 120 GB
SSD ARK ID 82113
Random write (100% span) 12000 IOPS
Random read (100% span) 65000 IOPS
Intel High Endurance Technology (HET) N
TRIM support Y
Random write (4KB) 12000 IOPS
Random read (4KB) 67000 IOPS
Latency (read) 50 µs
Latency (write) 65 µs
Enhanced Power Loss Data Protection technology Y
SSD temperature monitoring Y
End-to-End Data Protection Y
Security algorithms 256-bit AES
Lithography 20 nm
Mean time between failures (MTBF) 2000000 h
Data transfer rate 6 Gbit/s
Solid-state drive interface Serial ATA III

Technical details

Non-operating shock 1000 G
Operating shock 1000 G
Status Launched
Non-operating vibration 3.13 G
Operating vibration 2.17 G
Storage temperature (T-T) -55 - 95 °C
Product type 19

Software

Linux operating systems supported Y

Design

Product family Data center SSD
Product series Intel DC S3500
Product codename Wolfsville
RoHS compliance Y

Weight & dimensions

Depth 80 mm
Weight 11 g
Width 22 mm
Height 1.5 mm

Additionally

Native command queuing (NCQ) Y
Operating temperature range (T-T) 0 - 70 °C
120GB DC S3500 Series M.2, MLC, SATA III The Intel® SSD DC S3500 Series combines fast, consistent read performance with strong data protection and low active power levels to provide superior quality of service for video conferencing, big data analytics, or virtual client applications. Consistently low read latencies of 50µs typical (500µs max for 99.9% of the time) along with a tight distribution of up to 75,000 input/output per second (IOPS) delivers a high-performance, reliable, and efficient SSD specifically designed for data center application upgrades.

Key features and benefits of this drive include an Intel® 3rd generation controller, industry-leading 20nm multi-level cell (MLC) NAND flash technology, full end-to-end data protection, enhanced power-loss data protection, and a broad range of capacities up to 1.6 TB.
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