| Solid-state drive interface | SAS |
|---|---|
| Lithography | 16 nm |
| Random write (4KB) | 30000 IOPS |
| Random read (4KB) | 180000 IOPS |
| Memory type | eMLC |
| Solid-state drive capacity | 480 GB |
| Bytes per sector | 512 |
| Sequential writing | Y |
| Maximum non-operating altitude | 12192 m |
|---|---|
| Operating shock | 1000 G |
| Non-operating shock | 1000 G |
| Maximum operating altitude | 3048 m |
| Internal | Y |
|---|
| Operating voltage | 12 V |
|---|---|
| Power consumption (idle) | 3.54 W |
| Power consumption (read) | 5.1 W |
| Power consumption (write) | 6.79 W |
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