| Solid-state drive capacity | 3200 GB |
|---|---|
| Lithography | 16 nm |
| Bytes per sector | 512 |
| Sequential writing | Y |
| Random write (4KB) | 20000 IOPS |
| Random read (4KB) | 180000 IOPS |
| Solid-state drive interface | SAS |
| Memory type | eMLC |
| Power consumption (idle) | 5.4 W |
|---|---|
| Power consumption (read) | 9.15 W |
| Power consumption (write) | 13.15 W |
| Operating voltage | 12 V |
| Non-operating shock | 1000 G |
|---|---|
| Maximum non-operating altitude | 12192 m |
| Operating shock | 1000 G |
| Maximum operating altitude | 3048 m |
| Internal | Y |
|---|
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