Memory modules Transcend

200PIN DDR333 Unbuffered SO-DIMM 128MB With 16Mx8 CL2.5 The TS16MSD64V3D5 is a 16M x 64bits Double Data Rate SDRAM high-density for DDR333.The TS16MSD64V3D5 consists of 8pcs CMOS 16Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages, and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS16MSD64V3D5 is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

• Power supply: VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V

• Max clock Freq: 166MHZ.

• Double-data-rate architecture; two data transfers per clock cycle

• Differential clock inputs (CK and /CK)

• DLL aligns DQ and DQS transition with CK transition

• Auto and Self Refresh 15.6us refresh interval.

• Data I/O transactions on both edge of data strobe.

• Edge aligned data output, center aligned data input.

• Serial Presence Detect (SPD) with serial EEPROM

• SSTL-2 compatible inputs and outputs.

• MRS cycle with address key programs. CAS Latency (Access from column address): 2.5 Burst Length (2, 4, 8) Data Sequence (Sequential & Interleave)