takeMS 1024Mb DDR3 PC1066 CL7 1GB DDR3 1066MHz memory module

1024Mb DDR3 PC1066 CL7 These memory devices are JEDEC standard unbuffered DIMMs, based on CMOS DDR3 SDRAM technology using DDR3 SDRAMs in FBGA packages on a 240-pin glass epoxy substrate. The memory array is designed with Double Data Rate (DDR3) Synchronous DRAMs for unbuffered applications.

Fly-by command/address/control bus architecture of DDR3 SDRAMs allows
for concurrent operation, thereby providing high, effective bandwidth. This main benefit of DDR3 is made possible by its 8 bit prefetch buffer.

DDR3 memory ensures a power consumption reduction of 30% compared to DDR2 modules due to DDR3's 1.5 V supply voltage, also defined as "Enhanced low power features".

These modules feature Serial Presence Detect (SPD) based on a serial EEPROM device. DDR3 SPD programming is based on a speed bin. DDR3 latencies are numerically higher because the clock cycles by which they are measured are shorter. Absolute latency (ns) is generally equal to or faster than DDR2.